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GaN Epitaxial Wafer
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Sic Epitaxial Wafeltje
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GaAs Epi-wafel
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CVD diamantsubstraten
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Snel thermisch uitgloeisysteem
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Hall-effect sensortester
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Het Wafeltje van het aluminiumnitride
(21)

De Spaander van de laserdiode
(10)

Het Kristal van het siliciumcarbide
(12)

Ga2O3 Wafeltje
(13)

siliciumwafeltje
(26)

Sapphire Wafer
(19)

Gevormde Sapphire Substrates
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wafeltjehouder
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Wafelsnijmachine
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gaas epi wafer side polished online fabricage

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VGF 2inch GaAs Epi Wafer Undoped Substraten Side Polished Etched
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types of GaAs Wafer; polycrystalline ... Lees meer

2022-09-27 17:19:36

17mm 2inch GaAs Epi Wafeltje Undoped Substraten 50.8mm
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17±1mm OF Length 2inch GaAs (100) Undoped Substrates 50.8±0.2mm Overview The conversion efficiency of a high-efficiency solar-cell panel based on GaAs is up to 40%. At present, such solar-cell panels are widely ... Lees meer

2022-09-27 17:18:41

2inch GaAs Epi Wafer GaAs Undoped Substraten VGF
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GaAs-Si Wafer 2inch GaAs (100) Undoped Substrates EJ[0-1-1]±0.5° Overview GaAs applications cover a large variety of transistors for industry spanning optical fiber communication, wireless networks (WLAN), ... Lees meer

2022-09-27 12:00:48

2inch GaAs Undoped Substratengaas Epi Wafeltje 0.4E18 aan 1E18
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2inch GaAs (100) Undoped Substrates GaAs-Si Wafer 0.4E18~1E18 Overview The RF devices produced with GaAs substrates are commonly used in wireless communication applications, including wireless networks (WLAN), ... Lees meer

2022-10-09 09:53:31

Halfgeleiderverbinding 2 inch GaAs Epi Wafer GaAs Si Wafer UKAS
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GaAs-Si Wafer 2inch GaAs (100) Undoped Substrates (100)15°±0.5° Off TowardA Overview Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some diode s, field-effect transistor s (FETs), ... Lees meer

2022-09-27 17:18:19

5x10mm2 GaN epitaxiaal wafeltje Un-gedoteerd SI-type
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF ... Lees meer

2024-10-29 11:49:57

Optische communicatie Galliumarsenide Substraat LED's
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2inch GaAs (100) Undoped Substrates Overview Gallium arsenide is used in the manufacture of light-emitting diode s (LEDs), which are found in optical communications and control systems. Gallium arsenide can ... Lees meer

2022-10-09 09:53:08

JDCD10-001-005 2 inch GaAs ((111) Zn gedopte substraten
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2inch GaAs(111) Zn-doped substrates Overview GaAs crystals can be created through three different methods. One of the more common methods is the vertical gradient freeze process, which involves growing crystals ... Lees meer

2025-04-27 11:43:51

JDCD10-001-003 2 inch GaAs ((100) Zn gedopte substraten
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2inch GaAs(100) Zn-doped substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types of GaAs Wafer; polycrystalline ... Lees meer

2025-04-27 11:43:51

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GaN Epitaxial Wafer

Sic Epitaxial Wafeltje

GaAs Epi-wafel

CVD diamantsubstraten

Snel thermisch uitgloeisysteem

Hall-effect sensortester

Het Wafeltje van het aluminiumnitride

De Spaander van de laserdiode

Het Kristal van het siliciumcarbide

Ga2O3 Wafeltje

siliciumwafeltje

Sapphire Wafer

Gevormde Sapphire Substrates

wafeltjehouder

Wafelsnijmachine

gaas epi wafer side polished online fabricage

VGF 2inch GaAs Epi Wafer Undoped Substraten Side Polished Etched
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17mm 2inch GaAs Epi Wafeltje Undoped Substraten 50.8mm
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2inch GaAs Epi Wafer GaAs Undoped Substraten VGF
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2inch GaAs Undoped Substratengaas Epi Wafeltje 0.4E18 aan 1E18
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Halfgeleiderverbinding 2 inch GaAs Epi Wafer GaAs Si Wafer UKAS
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5x10mm2 GaN epitaxiaal wafeltje Un-gedoteerd SI-type
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Optische communicatie Galliumarsenide Substraat LED's
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JDCD10-001-005 2 inch GaAs ((111) Zn gedopte substraten
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JDCD10-001-003 2 inch GaAs ((100) Zn gedopte substraten
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GaN Epitaxial Wafer

2inch het Type van het Gezichtsfe Gesmeerde Si van GaN Epitaxial Wafer C Vrije Status

Fe Gesmeerd GaN Substrates Resistivity > 10 ⁶ Ω·De Apparaten van cm rf

2 inch vrijstaande SI-GaN-substraten

Sic Epitaxial Wafeltje

Afschuining SiC epitaxiaal wafeltje 150,0 mm +0 mm/-0,2 mm 350,0um ± 25,0 um

4H Kristalvorm SiC Epitaxiaal Wafeltje Wafeltje Rand Afschuining 350.0um ± 25.0um

Enig het c-Gezicht van het Kristal sic Epitaxial Wafeltje Optisch Pools Si-Gezicht CMP