|
4H sic Epitaxial Wafeltje 0.015Ω•cm-0.025Ω•Cm ≤4000/cm ² 150,0 mm +0mm/-0.2mm2024-10-29 11:49:58 |
|
|
Polytype Geen Toegestaan SiC Epitaxiale wafer P-MOS P-SBD D-klasse2024-10-29 11:49:58 |
|
|
150.0mm +0mm/-0.2mm sic Epitaxial Wafeltje Geen Secundaire Vlakte 3mm2024-10-29 11:49:58 |
|
|
6inch sic Epitaxial Wafeltje2022-10-09 16:56:20 |
|
|
4H sic Epitaxial Wafeltjep-mos Rang 150,0 mm +0mm/-0.2mm 47,5 mm ± 1,5 mm2022-10-24 10:21:58 |
|
|
|
|
350um 4H SiC-substraat2022-10-09 16:57:57 |
|
|
Sic n-Type Substraat2022-10-09 16:57:15 |
|
|
Front Surface Roughness GaN On Silicon Wafer GaN Substrate2022-10-08 17:19:48 |
|
|
6inch 4H SiC-substraat N Type P SBD-klasse 350μm2022-10-24 10:23:04 |
